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Издательство "Новые технологии"
Государственное образовательное учреждение высшего профессионального образования "Московский государственный институт радиотехники, электроники и автоматики (технический университет)"
Институт сверхвысокочастотной полупроводниковой электроники РАН
Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» им. В.И. Ульянова (Ленина) СПбГЭТУ «ЛЭТИ»
Южный федеральный университет
Федеральное государственное автономное образовательное учреждение высшего образования «Национальный исследовательский университет «Московский институт электронной техники».
НПК «Технологический центр»
Уральский федеральный университет имени первого Президента России Б.Н. Ельцина
Томский государственный университет систем управления и радиоэлектроники
Казанский (Приволжский) федеральный университет
Новосибирский государственный технический университет
Сибирский федеральный университет
Пермский государственный национальный исследовательский университет
Дагестанский государственный технический университет
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20th INTERNATIONAL SYMPOSIUM "NANOSTRUCTURES: PHYSICS AND TECHNOLOGY"

June 24-30 2012
Nizhny Novgorod, Russia


The annual International Symposium on Nanostructures is chaired by two Nobel Prize laureates — Professor Zh. Alferov and Professor L. Esaki, and traditionally organized by Ioffe Institute and St Petersburg Academic University, which are pioneering in many directions of this impetuously developing area. The Symposium was launched in 1993 by its Co-Chairs. It was one of the first in the area, which has become one of the leading in the modern physics and technology.

The aim of the 20th Symposium is to focus on the newest achievements in physics, technology and applications of solid state nanostructures and bring together various groups working actively in these very important directions all over the world. The Symposium scientific program will cover a wide spectrum of physical phenomena, both basic and applied, and technological aspects related to nanostructures.

Main Topics

The symposium program will cover different aspects of semiconductor nanostructure research. We are seeking for contributions in the following list of topics:

  • Technology of Nanostructures: Growth, Self-Organization and Nanopatterning
  • Atomic-scale Characterization of Nanostructures
  • Electrical and Optical Properties of Nanostructures (including Spin-related Phenomena, Many Particle Effects, Infrared and THz Phenomena)
  • Nanostructure Device Applications in Opto-Ultrafast Electronics and Computing
  • Nanophotonics, Microcavity and Photonic Crystals: Properties, Characterization and Applications
  • Emerging Materials in Nanostrucutures (including Wide-bandgap Semiconductors, Oxides, Ferromagnetics, Carbon-based, Polymer and Biomaterials)
  • Nanostructures and Life Sciences
  • Metamaterials

Language

All contributions should be presented in English that is the official language of the Symposium. No simultaneous translation services will be provided.

Symposium Format

The Symposium program will comprise invited talks and contributed papers. The latter should be earlier unpublished works that either have been completed or are at their final stages. All contributions will be reviewed for technical merit and content by the International Program Committee on the basis of the extended abstracts submitted by the authors. Main criteria for paper acceptance are originality, significance of presented results, quality and completeness of the abstracts. The accepted papers will be assigned to either oral or poster presentation at the discretion of the International Program Committee.

Plenary, invited and contributed talks will be presented in a single-session format at opening, closing and regular oral sessions. There will be a few poster sessions.

Oral presentations will conform to a 30-minute and 20-minute format (including 5 minutes for discussions) for plenary/invited and contributed talks, respectively.

Each poster presenter will be provided with a 1x1 m2 board.

Simposium site: http://www.ioffe.ru/NANO2012/

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