NANO- AND MICROSYSTEMS TECHNOLOGY

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INTERDISCIPLINARY, SCIENTIFIC, TECHNIQUE AND PRODUCTION JOURNAL

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Content

11th International Symposium
«NANOSTRUCTURES: PHYSICS AND TECHNOLOGY»

St Petersburg, Russia, 23–28, June 2003

ANNOUNCEMENT & CALL FOR PAPERS

Organizers

Scientific Engineering Center for Microelectronics at the Ioffe Institute
Ioffe Physico-Technical Institute

in association with Institutions of the Russian Academy of Sciences

Division of Physical Sciences
St Petersburg Scientific Center
Ministry of Industry, Science and Technologies of the Russian Federation
Research Council for the Project Physics of Solid State Nanostructures

Co-Chairs

Zh. ALFEROV (Russia)
L. ESAKI (Japan)

Foreword

The annual International Symposium on Nanostructures is chaired by two Nobel Prize winners, Professor Zh. Alferov and Professor L. Esaki, and is traditionally organized by the Ioffe Institute that is still pioneering in many directions of this impetuously developing area. The Symposium was launched in 1993 by its Co-Chairs as one of the first in an area that now is becoming one of the leading within modern solid state physics and technology.
The aim of this Symposium is to focus on the newest achievements in physics, technology and applications of the solid state nanostructures and to bring together in the meeting various groups working actively in these very important directions all over the world. The Symposium scientific program will cover a wide range spectrum of physical phenomena, both basic and applied, and technological aspects related to nanostructures.

Location and Date

The forthcoming symposium will be held in St Petersburg, June 23–28, 2003 during celebrations of the 300-anniversary of St Petersburg foundation. The symposium has been included into an official list of jubilee events. The first three days of Symposium will be held at the Educational Center of the Ioffe Institute and concluding days will be arranged in a resort area located in surroundings of St Petersburg.
This is the time of so-called "White Nights" in St Petersburg and we are certain that you and your family will also enjoy the many cultural places that St Petersburg and its suburbs offers.

Symposium Committees

International Advisory Committee

Zh. Alferov (Russia) N. Holonyak Jr. (USA)

Y. Arakawa (Japan) L. Keldysh (Russia)

A. Aseev (Russia) G. Landwehr (Germany)

D. Bimberg (Germany) J. Merz (USA)

L. Esaki (Japan) M. Shur (USA)

S. Gaponov (Russia) M. Skolnick (United Kingdom)

E. Gornik (Austria) R. Suris (Russia)

Yu. Gulyaev (Russia) B. Zakharchenya (Russia)

Programme Committee

R. Suris, Chair (St Petersburg) P. Kop'ev (St Petersburg)

V. Evtikhiev, Secretary (St Petersburg) Z. Krasil'nik (Nizhnii Novgorod)

A. Andronov (Nizhnii Novgorod) V. Kulakovskii (Chernogolovka)

N. Bert (St Petersburg) M. Kupriyanov (Moscow)

A. Chaplik (Novosibirsk) I. Merkulov (St Petersburg)

V. Dneprovskii (Moscow) V. Panov (Moscow)

B. Egorov (St Petersburg) E. Poltoratskii (Moscow)

A. Gippius (Moscow) N. Sibeldin (Moscow)

S. Gurevich (St Petersburg) V. Timofeev (Chernogolovka)

S. Ivanov (St Petersburg) V. Volkov (Moscow)

Yu. Kopaev (Moscow) L. Vorobjev (St Petersburg)

Organizing Committee

M. Mizerov, Chair (Center for Microelectronics)

B. Egorov, Secretary (Ioffe Institute)

D. Donskoy (St Petersburg Scientific Center)

V. Grigor'yants, (Ioffe Institute)

G. Mikhailov (Ioffe Institute)

N. Sibeldin (Lebedev Physical Institute)

E. Solov'eva (Ioffe Institute)

V. Zayats (Division Physical Sciences)

Award Committee

Zh. Alferov, Chair (Russia)

D. Bimberg (Germany) L. Keldysh (Russia)

Al. Efros (USA) M. Skolnick (United Kingdom)

L. Esaki (Japan) R. Suris (Russia)

M. Heuken (Germany) V. Timofeev (Russia)

D. Heitman (Germany) S. Tsai (Japan)

Language

All contributions should be presented in English that is the official language of the Symposium. No simultaneous translation services will be provided.

General Topics

Growth and Fabrication of Nanostructures
Nanostructure Characterization and Novel Atomic-Scale Probing Techniques
Physical Effects in Quantum Wells, Quantum Wires, Quantum Dots and Superlattices
Novel Device Applications

The emphasis will be on the physics and technology of nanostructures based on III–V, II–VI, IV–IV and IV–VI compounds. However, presentations on other new materials and compositions are also welcome.

Symposium Format

The Symposium programme will comprise invited talks and contributed papers. The latter should be earlier unpublished works that either have been completed or are at their final stages. All contributions will be refereed for technical merit and content by the Programme Committee on the basis of the extended abstracts submitted by authors. Main criteria for paper acceptance are originality, significance of presented results, quality and completeness of the abstracts. The accepted papers will be assigned to either oral or poster presentation at the discretion of the Programme Committee.
Invited and contributed talks will be presented in a single-session format at opening, closing and regular oral sessions. To promote the discussion time the number of oral presentations will be limited to about 60 papers.
There will be a few poster sessions. The total number of poster presentations will be limited to about 100 papers.
Oral presentations will conform to a 30-minute and 20-minute format (including 5 minutes for discussions) for invited and contributed papers, respectively. Each poster presenter will be provided with a 1x1 m board.

AIXTRON Young Scientist Award

Symposium Programme Committee and the Board of AIXTRON AG (Germany) established a special award to honour a young scientist who will present at the Symposium the best paper in the field of solid state nanostructures. The award consists of a diploma and a $500 reward sponsored by AIXTRON AG.
The recipients of this Award are:

1999 A. Kovsh (Ioffe Institute, St Petersburg, Russia)

2000 Th. Gruber (Wurzburg University, Wurzburg, Germany)

2001 I. Shorubalko (Lund University, Lund, Sweden)

2002 S. Kennedy (University of Alberta, Edmonton, Canada)

The awardee will be selected by the Award Committee from the Symposium participants nominated by the Programme Committee. The Chair of the Award Committee will announce the winner at the Award Ceremony scheduled for the last day of the Symposium.

Selection Criteria and Conditions of Entry

The competition will be opened to scientists under the age of thirty-five from all over the world. In case of many authors' papers the principal author will be considered as an applicant for the award on behalf of others.
In addition to an extended abstract (no less than 4 pages) an applicant should also submit a separate sheet with complete information about the applicant: name; birthday; Ph.D. degree, if any; postal address; e-mail and fax number, to the Secretary of the Organizing Committee.
The main selection criterion will be the best demonstration of scientific achievements in the field of physics and technology of solid state nanostructures.

Invited Speakers

A number of distinguished scientists from all over the world have been invited to present talks on recent progress in various key areas of nanostructure physics and technology. While the invitation process is still in progress, a list of speakers who have accepted the invitation will be timely updated.

Tsuneya Ando
Department of Physics, Tokyo Institute of Technology, Japan Quantum transport in carbon nanotubes

Nikolay Bert
Ioffe Institute, St Petersburg, Russia InAs quantum dots in GaAs under various conditions: a look through electron microscope

Dieter Bimberg
Institut fur Festkorperphysik, Technische Universitat Berlin, Germany Quantum dot photonics: from lasers to networks

Stephen Chou
Nanostructure Lab. Department of Electrical Engineering Princeton University, USA Nanoimprint — an engine to nanofabrication

Anatoly Dvurechenskii
Institute for Semiconductor Physics, Novosibirsk, Russia Single electron effects in Ge/Si quantum dots heterostructures

Alexander Efros
Naval Research Laboratory Washington DC, USA Auger processes in nanosize semiconductor crystals

Gottfried Strasser
Institut fur Festkorperelektronik, TU Wien, Austria GaAs-based quantum cascade lasers

Detlef Heitmann
Institut fur Angewandte Physik Universitat Hamburg, Germany Magnetization of electrons in quantum dots and antidot arrays measured with micromechanical cantilevers

Viktor Klimov
Los Alamos National Laboratory, USA Strongly confined multiexcitons and optical gain in semiconductor nanocrystals

Heinrich Rohrer
Wollerau, Switzerland Challenges in nanotechnology

Tatiana Shubina
Ioffe Institute, Russia A role of inversion domains in optical properties of GaN-based layers and nanostructures

Maurice Skolnick
Department of Physics University of Sheffield, United Kingdom Interaction of self assembled quantum dots with their environment

Vladislav Timofeev
Institute for Solid State Physics, Chernogolovka, Russia Bose condensation of interwell excitons in GaAs/AlGaAs coupled quantim wells: phase diagram

Shen Tsai
NEC Fundamental Research Laboratories, Tsukuba, Japan Coupled Josephson quantum bit

Daniel Tsui
Department of Electrical Engineering, Princeton University, USA Some long standing electron physics problems in confined semiconductors

Igor Vodyanoy
Office of Naval Research, Arlington, USA Scanning ion conductance microscopy (SICM) for nanotechnology

Andreas Waag
Abteilung Halbleiterphysik, Universitat Ulm, Germany Development of a ZnO based technology for potential applications in optoelectronics and magnetoelectronics

Proceedings

The Symposium Proceedings, containing extended abstracts of invited (6 pages) and contributed (4 pages) papers, will be published by the beginning of the Symposium in the same manner as in the last five years — from authors' electronic files.
Before the publication, the copyright must be transferred to the Ioffe Institute — one of the Symposium Organizers and the Proceedings publisher. Copyright transfer will take the effect from the date on which the author is notified of the inclusion of his (her) contribution in the Symposium Programme.
Authors are requested to submit in due time a completed Assignment of Copyright Form in hard copy. In the case of multi-author papers, only one of the authors needs to sign the form. This signature assumes that all the authors have agreed to transfer the copyright.
Deadline for submission of extended abstracts is the 1st February 2003.

Registration

Participants should register preliminarily by sending a filled-in Registration Form. The form may be sent in the online mode or by e-mail or fax.

Registration Fee

The registration fees include a Proceedings copy, a welcome reception, excursions, lunches during the first three days, coffee refreshments during the technical sessions, meeting at the airport and transportation to a hotel and back while accommodation and meals are not included into fees.

before May 28,
2003 after May 28,
2003

Participant $340 $390

Student* $200 $250

Accompanying person $70 $70

* Students registrations should be accompanied by an appropriate letter from the supervisor confirming the student status.

Accommodation

A block of hotel rooms (single and double) in different price categories ($50--$130 per night) will be timely booked for participants' accommodation. Hotels selected for accommodation and final room rates will be announced in due time.
Rooms will be booked from June 21 to June 27, 2003. Additional nights before and/or after the symposium can be arranged if requested sufficiently early.

Payment

Registration fees and accommodation costs should be paid in US dollars in advance by a bank transfer. To our great regret, no credit cards or cheques will be acceptable.
Bank details and relevant information concerning the prepayment will be announced later.

Cancellation and Refund

If you have already registered and find that you are not able to come, you must notify the Organizing Committee in writing of your request for cancellation and refund. Refunds will be made upon receipt of a written notice, less a $50 service charge, if received by June 8, 2003. After this date, no refund can been given.

Passport and Visa

A foreigner travelling to Russia must have a valid passport (its expire date should be not earlier than 6 months after the date of visitor's departure from Russia) and an appropriate visa. To get a visa, a visitor has to submit to a Russian Embassy or Consulate an official letter of invitation authorized by the Russian Ministry of Foreign Affairs.
Each foreign participant (and accompanying person) will timely get such a letter if he (she) fills-in the relevant fields of the Registration Form and sends this form together with a copy of the first pages of a passport (where all personal data are available) to the Secretary of the Organizing Committee by March 27, 2003, at the latest. A copy of the passport pages should be sent preferably by e-mail as attached graphic file or by fax.
Participants are strongly advised to follow these recommendations and to apply for a visa immediately after receiving an original copy of the invitation to ensure that the visa is issued timely.

Social Programme

An official social programme (covered by the registration fee) consisting of Welcome Party and two excursions to world-famous sights of St Petersburg will be arranged for participants and their accompanying persons. The Symposium banquet (optional) will be also arranged.

Important Dates

Deadline for abstract submission	February 1, 2003
Notification of paper acceptance	March 20, 2003
Deadline for personal data submission	March 27, 2003
Deadline for advanced payment	May 28, 2003
Deadline for payment refund	June 8, 2003
Deadline for paper submission	June 23, 2003

Correspondence

Secretary of the Organizing Committee:
B. Egorov
Ioffe Institute, 26 Polytechnicheskaya, St Petersburg 194021, Russia
Phone: (812) 247 2617, 247 4059
Fax: (812) 247 1017, 247 8640

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11th International Symposium «NANOSTRUCTURES: PHYSICS AND TECHNOLOGY»