Annotation of the article

Issue N12 2017 year

DOI: 10.17587/nmst.19.714-721

Simulation of Graphene Field-Effect Transistors with the Single and Dual Gates

Abramov I.I., D. Sci., Professor, e-mail: nanodev@bsuir.edu.by, Belarusian State University of Informatics and Radioelectronics, Minsk, 220013, Belarus, Kolomejtseva N.V., Researcher, Labunov V.A., Dr. Sci. (Tech.), Academician of NASB, Academician of RAS, Professor, Head of Laboratory, Romanova I.A., Researcher, Belarusian State University of Informatics and Radioelectronics, Minsk, 220013

Simulation of the single- and dual-gate field-effect transistors based on a monolayer graphene was carried out with the use of the developed combined models. Influence of different factors on the IV-characteristics of devices was investigated. The simulation results agree well with the experimental data.

Keywords: field-effect transistor, monolayer graphene, IV-characteristic, combined model, simulation

pp. 714 - 721