Annotation of the article

Issue N5 2017 year

DOI: 10.17587/nmst.19.265-272

Toward Realization or Terahertz Lasers Based on Graphene Heterostructures

Ryzhii V.I., D. Sc., Prof., Corr. Member of RAS, Principle Researcher, e-mail: vryzhii@gmail.com, Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, 117105, Russian Federation, Ryzhii M.V., D. Sc., Associate Prof., e-mail: m-ryzhii@u-aizu.ac.jp, Department of Computer Sci. and Eng., University of Aizu, Aizu-Wakamatsu, Japan, Otsuji T., Doctor of Eng., Prof., e-mail: otsuji@riec.tohoku.ac.jp, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

We report on recent achievements by the groups of the Russian and Japanese researchers toward the implementation of terahertz lasers based on graphene heterostructures with the electrical (injection) pumping. Two types of graphene-based lasers are discussed: lasers based on a single- and multiple graphene-layer p-i-n heterostructures with the side p- and n-injecting v regions using the interband intralayers radiative transitions and lasers based on double-graphene-layer heterostructures comprizing the individually contacted graphene layers separated by a tunneling barrier layer, using the resonant-tunneling photon-assisted intraband interlayer transitions.

Keywords: terahertz radiation, graphene, heterostructure, population inversion, laser

pp. 265 - 272